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M05500 - SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers Revision:SEMI M55-0817 - Superseded SEMI E123-0703 (designation update)

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Description

SEMI E123-0703 (designation update)

The purpose of this Practice is to promote commonality of approach to the analysis of uniformity among all parties needing to generate or assess such information

• Data communications

org in July 2001

or map arrays on the front or back surface of a patterned or unpatterned wafer

M05500 - SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers Revision:SEMI M55-0817 - Superseded SEMI E123-0703 (designation update)These specifications cover substrate requirements for monocrystalline high purity silicon carbide wafers of crystallographic polytype 6H and 4H used in semiconductor and electronic device manufacturing. A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.

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